Silicon crystals almost free of dislocations

Silicon crystals almost free of dislocations have been grown from the melt. The technique is based on Dash Method. Results on a typical crystal are given. The generation of dislocations and their propagation as the crystal grows are discussed.

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Bibliographic Details
Published in:Journal of crystal growth 1971-01, Vol.8 (2), p.223-225
Main Authors: Borle, W.N., Tata, S., Varma, S.K.
Format: Article
Language:English
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Summary:Silicon crystals almost free of dislocations have been grown from the melt. The technique is based on Dash Method. Results on a typical crystal are given. The generation of dislocations and their propagation as the crystal grows are discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(71)90149-7