The combination of two growth methods for the epitaxial deposition of silicon films on insulating substrates

• Published in: Journal of crystal growth 1972, Vol.17, p.249-253
• Main Authors: Druminski, M., Schlötterer, H.
• Format: Article
• Language: English
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(72)90254-0

Thin epitaxial silicon films (0.5–3 μm) on spinel and sapphire are produced by using a combination of two growth methods. After complete coverage of the substrate surface with silicon by decomposition of silane with a high deposition rate (e.g. 2–3 μm/min), hydrogen chloride is added to the gas stream without changing the silane amount. By the first step reactions between silicon and the substrate surface are reduced to a minimum. During the second step the net growth rate decreases to ≈0.3 μm/min. Silicon layers grown by this process are more homogeneous and perfect than films of equal thickness grown with a constant rate. The better quality is connected with lower optical absorption coefficients and increase in silicon surface smoothness. The silicon growth rate as a function of the hydrogen chloride flow is in good agreement with theoretical and experimental results already published in literature.