Structure of autoepitaxial diamond films

A reflection high energy electron diffraction (RHEED) method has been used to investigate the structural peculiarities of synthetic diamond autoepitaxial films, deposited from a gaseous phase onto natural diamond seed crystal. The diamond films on the (111) and (110) faces usually have internal stre...

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Bibliographic Details
Published in:Journal of crystal growth 1975-01, Vol.31, p.44-48
Main Authors: Derjaguin, B.V., Spitsyn, B.V., Gorodetsky, A.E., Zakharov, A.P., Bouilov, L.L., Aleksenko, A.E.
Format: Article
Language:English
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Summary:A reflection high energy electron diffraction (RHEED) method has been used to investigate the structural peculiarities of synthetic diamond autoepitaxial films, deposited from a gaseous phase onto natural diamond seed crystal. The diamond films on the (111) and (110) faces usually have internal stresses, which cause the (111) plane microtwinning process at thicknesses of about 1000 Å. The thickness of twin lamellas is about 0.01−1μm. On the (100) face the diamond films do not undergo twinning and have a high structural perfection.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(75)90108-6