Aluminum redistribution in EFG of silicon ribbon

Impurity transport in EFG of silicon ribbon has been studied with the help of spreading resistance measurements and infrared transmission spectroscopy taken on ribbon grown from aluminum-doped melts. Redistribution of aluminum do pant is observed both in the ribbon thickness and width dimensions. Th...

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Bibliographic Details
Published in:Journal of crystal growth 1980, Vol.48 (1), p.74-84
Main Authors: Kalejs, J.P., Freedman, G.M., Wald, F.V.
Format: Article
Language:English
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Summary:Impurity transport in EFG of silicon ribbon has been studied with the help of spreading resistance measurements and infrared transmission spectroscopy taken on ribbon grown from aluminum-doped melts. Redistribution of aluminum do pant is observed both in the ribbon thickness and width dimensions. The redistribution pattern across the ribbon width can be explained with the help of a two-dimensional model of impurity transport in the melt ahead of the growth interface. The model predictions have been used to obtain a value for the diffusion coefficient of aluminum in liquid silicon.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(80)90195-5