The single crystal growth and electrical properties of cobalt-doped indium phosphide

It is shown that semi-insulating properties can be induced in single crystals of indium phosphide grown by the liquid encapsulation Czochralski technique by using cobalt as a dopant. A mean value of segregation coefficient for cobalt in InP equal to 4 × 10−5 has been determined. Precipitation of a p...

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Bibliographic Details
Published in:Journal of crystal growth 1981-11, Vol.55 (2), p.263-267
Main Authors: Cockayne, B., MacEwan, W.R., Brown, G.T.
Format: Article
Language:English
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Summary:It is shown that semi-insulating properties can be induced in single crystals of indium phosphide grown by the liquid encapsulation Czochralski technique by using cobalt as a dopant. A mean value of segregation coefficient for cobalt in InP equal to 4 × 10−5 has been determined. Precipitation of a phosphide of cobalt is shown to limit the yield of useful semi-insulating material at high cobalt concentrations. The onset of semi-insulating behaviour occurs at a cobalt concentration in the crystal which equates approximately to the residual background concentration of n-type carriers. The close analogy of this behaviour with that observed in iron-doped crystals suggests that the semi-insulating properties are derived from Co2+ energy states which are shown to be present in these cobalt-doped crystals.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(81)90023-3