Vapor growth of diamond on diamond and other surfaces

• Published in: Journal of crystal growth 1981-01, Vol.52, p.219-226
• Main Authors: Spitsyn, B.V., Bouilov, L.L., Derjaguin, B.V.
• Format: Article
• Language: English
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(81)90197-4

It is shown that diamond crystallization by chemical vapor deposition should preferably be carried out at reduced pressures. Selective growth of diamond is ensured by introducing atomic hydrogen into the crystallization zone; this suppresses crystallization of graphite. The growth rate of homoepitaxial diamond films reached 1 μm/h at 1000°C; film properties were identical to those of bulk crystals. The lattice parameter in boron-doped films (∼0.1 at.%) decreased by 0.0009 Å; the film and substrate parameters coincide at dopant concentrations of ∼1 at.%, and the semiconductor diamond film intergrows with the substrate without stress. Diamond crystals up to several tens of microns in thickness were grown also on non-diamond substrates. At large supersaturation, the crystal habit is octahedral and at low supersaturation, it is cubic. The linear growth rate is constant at the early stages of crystal growth but then it diminishes to a level typical for the homoepitaxial growth of diamond films.