The growth and perfection of single crystal indium phosphide produced by the LEC technique

This paper describes recent studies at RSRE concerned with identifying residual impurities and structural defects in single crystal InP grown by the Czochralski liquid encapsulation technique (LEC) and discusses means whereby the impurities and defects can be controlled. The role of some deliberatel...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 1981-01, Vol.54 (1), p.9-15
Main Authors: Cockayne, B., Brown, G.T., MacEwan, W.R.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper describes recent studies at RSRE concerned with identifying residual impurities and structural defects in single crystal InP grown by the Czochralski liquid encapsulation technique (LEC) and discusses means whereby the impurities and defects can be controlled. The role of some deliberately added dopants (e.g., Fe, Co and Ge) in inducing specific properties is also described.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(81)90242-6