A method for the VPE growth of n +-n --n + InP layers

A method is described for the vapour phase epitaxial growth of thin n +-n --n + InP sandwich layers. It has been found that by interrupting growth after deposition of the first n + layer, and by flushing the apparatus for approximately 2 h before restarting growth that n +-n --n + layers can be grow...

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Bibliographic Details
Published in:Journal of crystal growth 1982-01, Vol.60 (1), p.203-205
Main Authors: Taylor, L.L., Apsley, N.
Format: Article
Language:English
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Summary:A method is described for the vapour phase epitaxial growth of thin n +-n --n + InP sandwich layers. It has been found that by interrupting growth after deposition of the first n + layer, and by flushing the apparatus for approximately 2 h before restarting growth that n +-n --n + layers can be grown with no interference between the different doping levels. In addition with suitable back etching, interface sharpness can be preserved. These results imply that simple diffusion cannot be responsible for the infilling normally observed.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(82)90201-9