The growth of ultra-pure InP by vapour phase epitaxy

We show that the purity of InP grown by the In-PCl 3-H 2 technique can be improved by controlling the PCl 3 bubbler temperature. Hall mobilities as high as 130,000 cm 2V -1 s -1 at 77 K have been achieved and an analysis of the Hall data shows that N A has been reduced to about 3×10 13 cm -3. N D re...

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Bibliographic Details
Published in:Journal of crystal growth 1983-11, Vol.64 (1), p.55-59
Main Authors: Taylor, L.L., Anderson, D.A.
Format: Article
Language:English
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Summary:We show that the purity of InP grown by the In-PCl 3-H 2 technique can be improved by controlling the PCl 3 bubbler temperature. Hall mobilities as high as 130,000 cm 2V -1 s -1 at 77 K have been achieved and an analysis of the Hall data shows that N A has been reduced to about 3×10 13 cm -3. N D remains constant throughout. We discuss two possible mechanisms for this effect and conclude that it is likely that the acceptors are impurities coming predominantly from the PCl 3.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(83)90248-8