Optical characterisation of acceptors in doped and undoped VPE InP

The compensation ratios (= N A/ N D) of a large number of InP layers, undoped and doped with S and Si donors, have been determined by analysis of photoluminescence spectra. Good agreement with electrical estimates of θ was obtained for uniform samples with θ⪅0.4, while non-uniform samples and sample...

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Bibliographic Details
Published in:Journal of crystal growth 1983-11, Vol.64 (1), p.142-148
Main Authors: Pickering, C., Tapster, P.R., Dean, P.J., Taylor, L.L., Giles, P.L., Davies, P.
Format: Article
Language:English
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Summary:The compensation ratios (= N A/ N D) of a large number of InP layers, undoped and doped with S and Si donors, have been determined by analysis of photoluminescence spectra. Good agreement with electrical estimates of θ was obtained for uniform samples with θ⪅0.4, while non-uniform samples and samples where the electrical data indicated high compensation showed large discrepancies. A good correlation was obtained with deep acceptor concentrations from DLTS measurements, indicating that the compensation is dominated by deep acceptors except at low carrier densities where the shallow (Zn) acceptors are important. N A was found to increase with carrier density, independent of dopant, and the increase was dominated by the deep acceptors.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(83)90261-0