Electrochemical characterization of GaAlAs-GaAs multilayer structure materials

GaAlAs-GaAs multilayer structure materials have been particularly interesting for the preparation of modern semiconductor devices. Using electrochemical measurements, such as 1/ C 2 ∼ V, I-V and photoeffects, the electrical behavior of p-GaAlAs, n-GaAlAs and p-GaAlAs/p-GaAs/n-GaAs was studied and th...

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Bibliographic Details
Published in:Journal of crystal growth 1984-01, Vol.69 (2), p.469-472
Main Authors: Ruiwu, Peng, Ziyao, Chen, Yongfu, Shao
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
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Summary:GaAlAs-GaAs multilayer structure materials have been particularly interesting for the preparation of modern semiconductor devices. Using electrochemical measurements, such as 1/ C 2 ∼ V, I-V and photoeffects, the electrical behavior of p-GaAlAs, n-GaAlAs and p-GaAlAs/p-GaAs/n-GaAs was studied and the electrode process discussed. A full description of the GaAlAs-GaAs multilayer structure was obtained.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(84)90358-0