Elimination of grown-in dislocations in In-doped liquid encapsulated Czochralski GaAs

Dislocation behavior is investigated in the seed and grown crystal at the initial growth stage of In-doped liquid encapsulated Czochralski (LEC) GaAs, and a novel method is proposed for eliminating grown-in dislocations propagating in the growth direction from the seed near crystal center. The grown...

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Bibliographic Details
Published in:Journal of crystal growth 1986-10, Vol.78 (1), p.36-42
Main Authors: Yamada, K., Kohda, H., Nakanishi, H., Hoshikawa, K.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:Dislocation behavior is investigated in the seed and grown crystal at the initial growth stage of In-doped liquid encapsulated Czochralski (LEC) GaAs, and a novel method is proposed for eliminating grown-in dislocations propagating in the growth direction from the seed near crystal center. The grown-in dislocations can be explained by the reaction of two or more misfit dislocations generated at the interface between the seed and grown crystal. A dislocation-free seed doped with indium of the same concentration as the crystal to be grown is essential for eliminating these dislocations. This technique is very effective for the growth of large-sized, completely dislocation-free crystals.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(86)90498-7