Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces

• Published in: Journal of crystal growth 1987-07, Vol.84 (1), p.79-97
• Main Authors: Thomsen, M., Ghaisas, S.V., Madhukar, A.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(87)90115-1

A previously developed computer simulation of molecular beam epitaxial growth of III–V semiconductors based on the configuration dependent reactive incorporation (CDRI) model is extended to allow for two different cation species. Attention is focussed on examining the nature of interfaces formed in lattice matched quantum well structures of the form AC/BC/AC(100). We consider cation species with substantially different effective diffusion lengths, as is the case with Al and Ga during the growth of their respective As compounds. The degree of intermixing occuring at the interface is seen to be dependent upon, among other growth parameters, the pressure of the group V species during growth. Examination of an intraplanar order parameter at the interfaces reveals the existence of short range clustering of the cation species.