A new high purity doping source for CVD Si: Ga epitaxy

A new CVD growth chemistry has been developed for producing very pure and high crystalline-quality gallium-doped silicon epitaxy. Gallium trichloride, GaCl 3, has been employed as an improved precursor to the currently accepted organometallic gallium source, trimethyl gallium, (CH 3) 3Ga. In contras...

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Bibliographic Details
Published in:Journal of crystal growth 1988-03, Vol.87 (4), p.425-430
Main Author: Huffman, J.E.
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:A new CVD growth chemistry has been developed for producing very pure and high crystalline-quality gallium-doped silicon epitaxy. Gallium trichloride, GaCl 3, has been employed as an improved precursor to the currently accepted organometallic gallium source, trimethyl gallium, (CH 3) 3Ga. In contrast to trimethyl gallium, this metal halide doping source does not cause carbon contamination of the epitaxial layer. Much more abrupt layer-to-layer transition regions have been demonstrated. Data on the electrical and crystalline characteristics of GaCl 3-grown Si:Ga layers are presented. The current doping limit of 4X10 17 cm -3 obtained with this chemistry under normal CVD growth conditions is well below the solubility limit and is indicative of the unusual surface chemistry involved in doping. Results of experiments to elucidate the doping mechanism are discussed.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(88)90089-9