Compositional gradients in InGaAs — A growth model and the electrical effects on photodetectors

Pin devices have been grown by vapor phase epitaxy in which the InGaAs layer has either a depth compositional gradient, as determined by X-ray diffractometry, or in which the InGaAs layers exhibit no depth compositional gradient. The electrical properties of these devices have been measured. While t...

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Bibliographic Details
Published in:Journal of crystal growth 1988-07, Vol.89 (4), p.519-526
Main Authors: Longeway, P.A., Smith, R.T.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Pin devices have been grown by vapor phase epitaxy in which the InGaAs layer has either a depth compositional gradient, as determined by X-ray diffractometry, or in which the InGaAs layers exhibit no depth compositional gradient. The electrical properties of these devices have been measured. While the devices with ungraded InGaAs layers show a strong dependence of the dark current on the lattice mismatch (versus the underlying substrate), the devices with depth gradients in the InGaAs layer exhibit low dark current (less than 10 nA) over a wide range of heterojunction mismatch conditions. We propose a model for the growth of the InGaAs layer which both accounts for the presence of the depth gradient and presents a scheme for growing depth-uniform (ungraded) material. We then extend this model to explain the differing electrical properties of devices with and without depth compositional gradients.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(88)90214-X