On the flow regimes in VPE reactors

Computer simulations of gas flows in cold wall vertical and horizontal VPE reactors are carried out. The characteristic features of the forced and natural convection regimes are discussed. The effect of the flow structure on the film thickness uniformity and on the time of change in gas composition...

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Bibliographic Details
Published in:Journal of crystal growth 1989-02, Vol.94 (2), p.537-550
Main Authors: Makarov, Yu.N., Zhmakin, A.I.
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Computer simulations of gas flows in cold wall vertical and horizontal VPE reactors are carried out. The characteristic features of the forced and natural convection regimes are discussed. The effect of the flow structure on the film thickness uniformity and on the time of change in gas composition is demonstrated for the growth of GaAs from a Ga( CH 3) 3- AsH 3- H 2 mixture.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(89)90032-8