Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy

• Published in: Journal of crystal growth 1989-11, Vol.98 (1), p.174-187
• Main Authors: Kuech, T.F., Tischler, M.A., Potemski, R., Cardone, F., Scilla, G.
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(89)90197-8

The controlled doping of n- and p-type Al xGa 1−x As has been studied for the dopant elements, C, Zn, Si, and Sn. Both the incorporation characteristics and the electrical properties of these dopants are reviewed and discussed fo Al xGa 1−x As grown by th metal-organic vapor phase epitaxy (MOVPE) technique. The incorporation of Si from SiH 4 and Si 2H 6 is dominated by heterogeneous and homogenous reactions respectively and represents the best understood of the doping systems. Zinc and carbon both possess complex dependencies on the MOVPE growth system parameters. The electrical behavior of n-Al x Ga 1− x As is dominated by the presence of the DX center. The relationship between this center and the electrical behavior of the material must be understood in order to properly characterize the doping behavior in Al xGa 1−x As layers and structures.