Selective-area epitaxy of GaAs by Molecular-Beam Epitaxy (MBE) and metalorganic MBE with excimer laser irradiation

Using an ArF excimer laser (193 nm, 15 ns pulse, 20 Hz, 50–200 mj cm -2 pulse -1), we demonstrated laser-inhibited molecular-beam epitaxy (MBE) of GaAs on the surface of (Ca,Sr)F 2 lattice-matched to a GaAs substrate. We also demonstrated laser-enhanced metalorganic MBE (MOMBE) of GaAs on GaAs. Thes...

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Bibliographic Details
Published in:Journal of crystal growth 1989-02, Vol.95 (1), p.140-141
Main Authors: Tu, C.W., Donnelly, V.M., Beggy, J.C., McCrary, V.R., McCaulley, J.A.
Format: Article
Language:English
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Summary:Using an ArF excimer laser (193 nm, 15 ns pulse, 20 Hz, 50–200 mj cm -2 pulse -1), we demonstrated laser-inhibited molecular-beam epitaxy (MBE) of GaAs on the surface of (Ca,Sr)F 2 lattice-matched to a GaAs substrate. We also demonstrated laser-enhanced metalorganic MBE (MOMBE) of GaAs on GaAs. These effects are due to the transient temperature rise during laser irradiation.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(89)90367-9