X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates

The diffraction study of AlAs epitaxial layers and AlAs/GaAs superlattices MBE-grown on misoriented (001) GaAs substrates show that an angle α, related to the misorientation ϵ and to the relative lattice mismatch along the growth axis Δ d/ d by tan α = (tan ϵ)Δ d/ d appears between the epitaxial (00...

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Bibliographic Details
Published in:Journal of crystal growth 1989-02, Vol.95 (1), p.288-291
Main Authors: Auvray, P., Baudet, M., Regreny, A.
Format: Article
Language:English
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Summary:The diffraction study of AlAs epitaxial layers and AlAs/GaAs superlattices MBE-grown on misoriented (001) GaAs substrates show that an angle α, related to the misorientation ϵ and to the relative lattice mismatch along the growth axis Δ d/ d by tan α = (tan ϵ)Δ d/ d appears between the epitaxial (001) planes and the substrate ones. This angle and the misorientation angle are always present even in non-intentionally misoriented substrates and can lead to an erroneous interpretation of rocking curves and θ/2θ scans, if ignored.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(89)90403-X