Preparation and characterization of SiNx films epitaxially grown on Si(111) substrates

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Bibliographic Details
Published in:Journal of crystal growth 1989-02, Vol.95 (1-4), p.464-467
Main Authors: Ichimori, T., Tabe, M., Sakakibara, Y.
Format: Article
Language:English
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ISSN:0022-0248
DOI:10.1016/0022-0248(89)90443-0