Measurement and mechanism of free carrier recombination in a silicon doping superlattice

The carrier lifetime of a silicon doping superlattice can be estimated by taking the product of the junction capacitance and the effective small signal resistance of the nipi structure. Carrier lifetimes as long as 1.2 s have been observed. Traps do no influence the carrier lifetimes.

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Bibliographic Details
Published in:Journal of crystal growth 1989-02, Vol.95 (1), p.486-489
Main Authors: Teo, K.H., McMullin, J.N., Weichman, F.L., Schmidt-Weinmar, H.G., Landheer, D., Denhoff, M.W.
Format: Article
Language:English
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Summary:The carrier lifetime of a silicon doping superlattice can be estimated by taking the product of the junction capacitance and the effective small signal resistance of the nipi structure. Carrier lifetimes as long as 1.2 s have been observed. Traps do no influence the carrier lifetimes.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(89)90449-1