Transmission electron microscopy of LPE grown CdHgTe

The defect structure in Cd x Hg 1- x Te layers grown by LPE on {111} B oriented CdTe and CdZnTe substrates has been studied by transmission electron microscopy. The interface between the epilayer and the substrate is characterized by a dislocation network and a variation in Hg/Cd concentration both...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 1989-06, Vol.96 (2), p.348-356
Main Authors: Nouruzi-Khorasani, A., Jones, I.P., Dobson, P.S., Williams, D.J., Astles, M.G.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The defect structure in Cd x Hg 1- x Te layers grown by LPE on {111} B oriented CdTe and CdZnTe substrates has been studied by transmission electron microscopy. The interface between the epilayer and the substrate is characterized by a dislocation network and a variation in Hg/Cd concentration both of which have a finite thickness. The geometry and nature of the interfacial dislocations have been determined by examination of a combination of transverse and planar bevelled TEM specimens. One source for the interface dislocations has been shown to be the dislocations in the substrate. Layers grown on CdZnTe show a much smaller density of interfacial dislocations. These are in the epilayer rather than at the chemical interface.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(89)90532-0