The low thermal stress HP-LEC growth of 75 mm diameter In-DOPED GaAs crystals

A study is presented of the effects of various thermal environments in a Melbourn high-pressure liquid encapsulated Czochralski puller on the thermal stress experienced by 75 mm diameter GaAs crystals doped with between 5.4×10 19 to 2.1×10 20cm −3 indium. Approaches investigated for obtaining low th...

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Bibliographic Details
Published in:Journal of crystal growth 1989, Vol.94 (1), p.75-84
Main Authors: McGuigan, S., Swanson, B.W., Thomas, R.N.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:A study is presented of the effects of various thermal environments in a Melbourn high-pressure liquid encapsulated Czochralski puller on the thermal stress experienced by 75 mm diameter GaAs crystals doped with between 5.4×10 19 to 2.1×10 20cm −3 indium. Approaches investigated for obtaining low thermal stress growth conditions include the use of thick (up to 6 cm) B 2O 3 encapsulating layers, a graphite “top hat” enclosure, and a controllable crystal after-heater and encapsulant heat shield. Of these, the latter configuration appears to yield the lowest thermal stress growth conditions using a 2 cm thick B 2O 3 encapsulant layer. Growths performed using this configuration have yielded low-dislocation (
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(89)90605-2