Liquid phase epitaxy of silicon at low temperatures

Thin layers of low-doped monocrystalline silicon are needed for three-dimensional integration. Liquid phase epitaxial Si layers were grown from Au/Si and Au/Bi/Si melts at temperatures between 400 and 800 °C. The extrapolation of the solubility curve allows the assumption that the solid solubility o...

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Bibliographic Details
Published in:Journal of crystal growth 1990-08, Vol.104 (3), p.744-747
Main Authors: Kresse, F., Baumann, G.G., Jäntsch, O., Haberger, K.
Format: Article
Language:English
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Summary:Thin layers of low-doped monocrystalline silicon are needed for three-dimensional integration. Liquid phase epitaxial Si layers were grown from Au/Si and Au/Bi/Si melts at temperatures between 400 and 800 °C. The extrapolation of the solubility curve allows the assumption that the solid solubility of Au in Si may be lower than 10 11 cm -3 at temperatures of about 400 °C. The Au concentrations were measured with different methods.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(90)90017-F