Growth of AlxGa1− xAs by reduced pressure MOVPE using trimethylamine alane

High quality epitaxial layers of Al x Ga 1- x As have been grown by reduced pressure MOVPE using the new aluminium precursor trimethylamine alane in combination with trimethylgallium and arsine. The layers were grown at 650°C and were shown to possess n-type conductivity for all aluminium compositio...

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Bibliographic Details
Published in:Journal of crystal growth 1990-11, Vol.106 (2), p.246-252
Main Authors: Jones, A.C., Rushworth, S.A., Bohling, D.A., Muhr, G.T.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
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Summary:High quality epitaxial layers of Al x Ga 1- x As have been grown by reduced pressure MOVPE using the new aluminium precursor trimethylamine alane in combination with trimethylgallium and arsine. The layers were grown at 650°C and were shown to possess n-type conductivity for all aluminium compositions. Low temperature photoluminescence data indicated that carbon was still present in the low aluminium content layers. In marked contrast to previous studies at atmospheric pressure, the AlGaAs layers grown at low pressure using trimethylamine alane were of high compositional and thickness uniformity.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(90)90070-2