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Observation of microscopic impurity distributions in InP using ion microscope

Microscopic inhomogeneities in the concentration of impurities in isoelectronically-doped InP single crystals are studied by ion-imaging using secondary ion mass spectrometry. Ion images of a (Ga+Sb+As) co-doped crystal show concentration modulations corresponding to the growth striations. As and Sb...

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Bibliographic Details
Published in:Journal of crystal growth 1990-06, Vol.103 (1), p.164-169
Main Authors: Homma, Yoshikazu, Tomita, Masato, Kurosawa, Satoru, Tohno, Shun-ichi
Format: Article
Language:English
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Summary:Microscopic inhomogeneities in the concentration of impurities in isoelectronically-doped InP single crystals are studied by ion-imaging using secondary ion mass spectrometry. Ion images of a (Ga+Sb+As) co-doped crystal show concentration modulations corresponding to the growth striations. As and Sb exhibit in-phase concentration modulations, while Ga exhibits an anti-phase modulation with respect to As and Sb. The magnitude of the concentration modulation largely depends on growth conditions, but is larger for Ga and Sb, ∽50%, and smaller for As, ∽6%. These element-specific behaviors are qualitatively explained by the difference in effective segregation coefficients of these elements in InP.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(90)90185-N