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Observation of microscopic impurity distributions in InP using ion microscope
Microscopic inhomogeneities in the concentration of impurities in isoelectronically-doped InP single crystals are studied by ion-imaging using secondary ion mass spectrometry. Ion images of a (Ga+Sb+As) co-doped crystal show concentration modulations corresponding to the growth striations. As and Sb...
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Published in: | Journal of crystal growth 1990-06, Vol.103 (1), p.164-169 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Microscopic inhomogeneities in the concentration of impurities in isoelectronically-doped InP single crystals are studied by ion-imaging using secondary ion mass spectrometry. Ion images of a (Ga+Sb+As) co-doped crystal show concentration modulations corresponding to the growth striations. As and Sb exhibit in-phase concentration modulations, while Ga exhibits an anti-phase modulation with respect to As and Sb. The magnitude of the concentration modulation largely depends on growth conditions, but is larger for Ga and Sb, ∽50%, and smaller for As, ∽6%. These element-specific behaviors are qualitatively explained by the difference in effective segregation coefficients of these elements in InP. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/0022-0248(90)90185-N |