Crystal growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman process

Recent improvements in the growth of 5-cm diameter CdTe and Cd0.96Zn0.04Te boules by the computer-controlled vertical modified-Bridgman (VMB) process are described. The most significant improvements in crystal qualuty are attributed to a combination of new furnace design, improved temperature-profil...

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Bibliographic Details
Published in:Journal of crystal growth 1988-01, Vol.86 (1-4), p.111-117
Main Authors: Sen, S., Konkel, W.H., Tighe, S.J., Bland, L.G., Sharma, S.R., Taylor, R.E.
Format: Article
Language:English
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Summary:Recent improvements in the growth of 5-cm diameter CdTe and Cd0.96Zn0.04Te boules by the computer-controlled vertical modified-Bridgman (VMB) process are described. The most significant improvements in crystal qualuty are attributed to a combination of new furnace design, improved temperature-profile control, and in-situ post-growth thermal annealing of boules. In addition, thermal diffusivities of CdTe and Cd0.96Zn0.04Te were measured as a function of temperature in the vicinity of the melting points. The effect of this critical parameter on the solid-liquid interface shape and position was determined with the aid of a finite-element numerical thermal model.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(90)90707-R