Middle infrared photoluminescence mapping of II–VI semiconductor wafers

Photoluminescence maps of II–VI semiconductor wafers were obtained by scanning the luminescence signal in the 2–10 μm wavelength range. The signals excited by either pulsed or cw YAG laser radiation were measured either in distinct spectral bands or without any spectral decomposition. From time reso...

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Bibliographic Details
Published in:Journal of crystal growth 1990-04, Vol.101 (1), p.474-478
Main Authors: Schmidt, H., Tomm, J.W., Herrmann, K.H.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Photoluminescence maps of II–VI semiconductor wafers were obtained by scanning the luminescence signal in the 2–10 μm wavelength range. The signals excited by either pulsed or cw YAG laser radiation were measured either in distinct spectral bands or without any spectral decomposition. From time resolved measurements the ratio of the intensities due to different optical transitions was deduced, if those exhibit different time constants. Hg 1- x Cd x Te and Hg 1- x Mn x Te wafers were examined by using the techniques mentioned. Further it was possible to identify tellurium inclusions in wide-gap CdTe and Cd 1- x Zn x Te due to the tellurium luminescence signal.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(90)91018-L