Physical and chemical kinetic processes in the CVD of silicon from SiH2Cl2/H2 gaseous mixtures in a vertical cylindrical hot-wall reactor

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Bibliographic Details
Published in:Journal of crystal growth 1991-09, Vol.113 (3-4), p.606-632
Main Authors: LANGLAIS, F, PREBENDE, C, COUDERC, J. P
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)90097-o