High carbon doping of AlxGa1−xAs (O ≤x ≤ 1) by atomic layer epitaxy for device applications

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Bibliographic Details
Published in:Journal of crystal growth 1991-01, Vol.107 (1-4), p.89-95
Main Authors: Chung, B.-C., Green, R.T., MacMillan, H.F.
Format: Article
Language:English
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ISSN:0022-0248
DOI:10.1016/0022-0248(91)90439-C