Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVD

Much of the work on InGaAs film growth has been limited to small single wafer systems with little reported information on the wafer-to-wafer and run-to-run repeatability of the films. We report here on the growth of highly uniform films in a multiwafer system with good run-to-run repeatability. The...

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Bibliographic Details
Published in:Journal of crystal growth 1991, Vol.107 (1), p.445-451
Main Authors: McKee, M.A., Norris, P.E., Stall, R.A., Tompa, G.S., Chern, C.S., Noh, D., Kang, S.S., Jasinski, T.J.
Format: Article
Language:English
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Summary:Much of the work on InGaAs film growth has been limited to small single wafer systems with little reported information on the wafer-to-wafer and run-to-run repeatability of the films. We report here on the growth of highly uniform films in a multiwafer system with good run-to-run repeatability. The uniformity of the film properties across the susceptor results from the careful design of the reaction chamber using fluid dynamical modeling. The control of the composition during the course of the run and from run-to-run was improved by careful design of the trimethylindium solid source container.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)90501-U