Growth of GaInAs and GaInAsP lattice matched to InP by metalorganic MBE

This study reports on the growth of GaInAs and GaInAsP single layers and heterostructures by metalorganic MBE (MOMBE) using trimethylindium (TMI), triethylgallium (TEG), arsine (AsH 3) and phosphine (PH 3) as starting materials. The growth parameters were optimized for a temperature range where also...

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Bibliographic Details
Published in:Journal of crystal growth 1991-05, Vol.111 (1), p.599-604
Main Authors: Heinecke, H., Baur, B., Höger, R., Miklis, A., Treichler, R.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:This study reports on the growth of GaInAs and GaInAsP single layers and heterostructures by metalorganic MBE (MOMBE) using trimethylindium (TMI), triethylgallium (TEG), arsine (AsH 3) and phosphine (PH 3) as starting materials. The growth parameters were optimized for a temperature range where also high quality InP is available. Ternary and quaternary layers exhibiting excellent uniformity across a wafer diameter of 3 inches were obtained with regard to layer thickness (≤1.5%) and material composition. SIMS measurements on GaInAs/InP and GaInAsP/InP double heterostructures revealed even for the problematic element As an abrupt modulation of about three orders of magnitude or more depending on the structure.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(91)91047-E