Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition

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Bibliographic Details
Published in:Journal of crystal growth 1992, Vol.116 (1-2), p.169-177
Main Authors: HAGEMAN, P. R, DE CROON, M. H. J. M, REEK, J. N. H, GILING, L. J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(92)90126-4