Growth of GaInAs(P) and GaInAsP/GaInAs MQW structures by CBE

We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 Å GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transm...

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Bibliographic Details
Published in:Journal of crystal growth 1992-05, Vol.120 (1), p.338-342
Main Authors: Rudra, A., Carlin, J.F., Ruterana, P., Gailhanou, M., Staehli, J.L., Ilegems, M.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 Å GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(92)90414-E