MOVPE growth of p-type ZnSe using dimethylaminolithium as the dopant

p-Type ZnSe layers with carrier concentrations ranging from high 10 14 cm -3 to mid 10 16 cm -3 have been grown at 470 and 600°C by metalorganic vapor phase epitaxy (MOVPE) using dimethylselenide as the sources and dimethylaminolithium as the dopant. Light-emitting diodes consisting of p-ZnSe/n-ZnSe...

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Bibliographic Details
Published in:Journal of crystal growth 1992-11, Vol.124 (1), p.616-619
Main Authors: Yanashima, K., Koyanagi, K., Hara, K., Yoshino, J., Kukimoto, H.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:p-Type ZnSe layers with carrier concentrations ranging from high 10 14 cm -3 to mid 10 16 cm -3 have been grown at 470 and 600°C by metalorganic vapor phase epitaxy (MOVPE) using dimethylselenide as the sources and dimethylaminolithium as the dopant. Light-emitting diodes consisting of p-ZnSe/n-ZnSe/n-GaAs have been fabricated based on the growth of p-type ZnSe layers. A typical diode has shown blue emission at room and low temperatures.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(92)90526-O