Molecular beam epitaxial growth and characterization of ZnTe and ZnTe- CdTe superlattice

Molecular beam epitaxial (MBE) growth of ZnTe and ZnTe- CdTe superlattice on GaAs(100) substrates was investigated by reflection high energy electron diffraction. Optimal growth parameters were proposed. Characterization of ZnTe film and ZnTe- CdTe superlattices was performed using X-ray diffraction...

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Bibliographic Details
Published in:Journal of crystal growth 1992-05, Vol.119 (3), p.322-328
Main Authors: Li, Jie, He, Li, Zhu, Nanchang, Lao, Pudong, Yuan, Shixin
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Molecular beam epitaxial (MBE) growth of ZnTe and ZnTe- CdTe superlattice on GaAs(100) substrates was investigated by reflection high energy electron diffraction. Optimal growth parameters were proposed. Characterization of ZnTe film and ZnTe- CdTe superlattices was performed using X-ray diffraction, photoluminescence and Raman scattering. It was found that although growth conditions play an important role, the main condition for achieving a high-quality CdTe-ZnTe superlattice is to avoid the generation of misfit dislocations.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(92)90687-E