In-situ spectroscopic characterisation of passivation layers on (Cd,Hg)Te

The growth of anodic sulphide films on CMT from aqueous solutions is investigated. In-situ spectroscopic ellipsometry and photocurrent measurements are used to characterise the surface films. The initial stages of growth appears to yield barrier-type films of CdS whereas the thicker films (>100 Å...

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Bibliographic Details
Published in:Journal of crystal growth 1992-02, Vol.117 (1), p.918-924
Main Authors: Berlouis, L.E.A., Peter, L.M., Greef, R., Astles, M.G.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The growth of anodic sulphide films on CMT from aqueous solutions is investigated. In-situ spectroscopic ellipsometry and photocurrent measurements are used to characterise the surface films. The initial stages of growth appears to yield barrier-type films of CdS whereas the thicker films (>100 Å) are shown to have a porous structure. Impurities are also incorporated during growth into the thicker sulphide layers which increase the light absorption below the band gap of CdS (2.42 eV).
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(92)90884-L