MOCVD SiC layer morphology and texture dependence on thickness and total pressure

β-SiC layers were deposited on graphite substrates in a cold-wall LPCVD reactor using tetramethylsilane diluted in hydrogen as precursor. The dependence of morphology and textures on thickness and total pressure was studied. Structural and morphological analysis were performed using SEM. TEM and X-r...

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Bibliographic Details
Published in:Journal of crystal growth 1993-03, Vol.128 (1), p.363-368
Main Authors: Santiso, J., Figueras, A., Rodríguez-Clemente, R., Armas, B., Combescure, C., Mazel, A., Kihn, Y., Sévely, J.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:β-SiC layers were deposited on graphite substrates in a cold-wall LPCVD reactor using tetramethylsilane diluted in hydrogen as precursor. The dependence of morphology and textures on thickness and total pressure was studied. Structural and morphological analysis were performed using SEM. TEM and X-ray diffraction.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(93)90349-2