Doping of wide gap II–VI compounds

We report on the p- and n-dopability of the quaternary wide-gap II–VI compound ZnMgSeTe as a function of the Te and Mg content. The samples were grown by molecular beam epitaxy (MBE) with activated nitrogen and chlorine as dopants. p-concentrations between 1018 and 1020 cm−3 are reached for Zn(1−x)M...

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Bibliographic Details
Published in:Journal of crystal growth 1995-01, Vol.146 (1-4), p.80-86
Main Author: Faschinger, W.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Defects and impurities: doping, implantation, distribution, concentration, etc
Electronics
Exact sciences and technology
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We report on the p- and n-dopability of the quaternary wide-gap II–VI compound ZnMgSeTe as a function of the Te and Mg content. The samples were grown by molecular beam epitaxy (MBE) with activated nitrogen and chlorine as dopants. p-concentrations between 1018 and 1020 cm−3 are reached for Zn(1−x)MgxSe(1−y)Tey with x < 0.2 and y > 0.25. Cl-doping levels are low for Te contents above 10%, but reasonable electron concentrations are achieved for Zn(1−x)MgxSe with x < 0.05. Based on these data, diodes of n-ZnMgSe with p-ZnMgSeTe were fabricated. The p-contacts to these diodes are ohmic and the electrical properties are superior to those of ZnSe based p-n junctions. The diodes show bright green electroluminescence at liquid nitrogen temperature, but so far only moderate electroluminescence at room temperature.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)00490-0