Time-resolved reflection high energy electron diffraction study of dynamical surface processes during molecular beam epitaxy of GaAs and AlAs

The reflection high energy electron diffraction (RHEED) intensity oscillation method is used for the analysis of nucleation kinetics of GaAs and AlAs during molecular beam epitaxy. The comparison shows that AlAs, in contrast to GaAs, reveals the gradual transition from a two-level to a multilevel gr...

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Bibliographic Details
Published in:Journal of crystal growth 1995-01, Vol.146 (1-4), p.344-348
Main Authors: Karpov, S.Yu, Myachin, V.E., Pogorelsky, Yu.V.
Format: Article
Language:English
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Summary:The reflection high energy electron diffraction (RHEED) intensity oscillation method is used for the analysis of nucleation kinetics of GaAs and AlAs during molecular beam epitaxy. The comparison shows that AlAs, in contrast to GaAs, reveals the gradual transition from a two-level to a multilevel growth mechanism while the growth rate increases. The critical III-group supersaturation measured on both materials appeared to be much lower for AlAs as compared to GaAs. This agrees with the fact that the AlAs binding energy is higher than the GaAs one.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)00556-7