Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy

• Published in: Journal of crystal growth 1995-02, Vol.148 (1), p.1-7
• Main Authors: Hamm, R.A., Chandrasekhar, S., Lunardi, L., Geva, M.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Cross-disciplinary physics: materials science; rheology; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)00862-0

Carbon-doped In 0.53Ga 0.47As structures have been grown on InP by metalorganic molecular beam epitaxy using carbontetrabromide as the dopant source. Hall, secondary ion mass spectrometry (SIMS) and X-ray measurements were done to characterize the material. Doping levels from 2 × 10 17 to 7 × 10 19 cm −3 were measured with mobilities ranging from 100 to 45 cm 2/V · s. SIMS data show very abrupt doping profiles with no apparent memory effects. Hydrogen was measured in the C doped regions, however, no passivation effects were observed and Hall and SIMS data agreed within experimental error. Post-growth anneals of the highest doped samples showed no change in carrier concentration. The incorporation of C showed a strong dependence on the group V beam flux (concentration ∼ flow − 3 4 ). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.