Selective growth of GaAs/InGaP heterostrusctures by photo-enhanced organomettalic chemical vapor deposition

Selective epitaxial growth of GaAs on GaAs and In 0.49Ga 0.51P surfaces, using photo-enhanced organomettalic chemical vapor deposition, was investigated. The growth rate dependence on illumination intensity, trimethylgallium partial pressure, and temperature is reported. In-situ patterning and three...

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Bibliographic Details
Published in:Journal of crystal growth 1994, Vol.135 (1), p.23-30
Main Authors: Maayan, E., Kreini, O., Bahir, G., Salzman, J., Eyal, A., Beserman, R.
Format: Article
Language:English
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Summary:Selective epitaxial growth of GaAs on GaAs and In 0.49Ga 0.51P surfaces, using photo-enhanced organomettalic chemical vapor deposition, was investigated. The growth rate dependence on illumination intensity, trimethylgallium partial pressure, and temperature is reported. In-situ patterning and three-dimensional shaping during growth of GaAs/InGaP burried heterostructures, are demonstrated. The experimental results are in good agreement with a simple model, in which the decomposition of absorbed trimethylgallium is assisted by surface recombination of photo-exicited free carriers.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)90721-8