Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane

SiC single crystalline ingots have been grown on faces perpendicular to the SiC (0001) basal plane by a sublimation method. It is shown that a polytypic structure of the grown crystal succeeds perfectly to that of the seed. Hexagonal etch pits are not observed, which are always detected on crystals...

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Bibliographic Details
Published in:Journal of crystal growth 1994, Vol.135 (1), p.61-70
Main Authors: Takahashi, Jun, Kanaya, Masatoshi, Fujiwara, Yuichiro
Format: Article
Language:English
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Summary:SiC single crystalline ingots have been grown on faces perpendicular to the SiC (0001) basal plane by a sublimation method. It is shown that a polytypic structure of the grown crystal succeeds perfectly to that of the seed. Hexagonal etch pits are not observed, which are always detected on crystals grown on {0001} faces. Moreover, this growth eliminates defects penetrating a crystal in the form of empty tubes. We discuss how the relation between dislocations and growth mechanism of SiC is influenced by the seed orientation.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)90726-9