Growth and doping of ZnTe and ZnSe epilayers with metalorganic vapour phase epitaxy

• Published in: Journal of crystal growth 1994-04, Vol.138 (1), p.412-417
• Main Authors: Wolf, K., Stanzl, H., Naumov, A., Wagner, H.P., Kuhn, W., Hahn, B., Gebhardt, W.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)90843-5

In this work we report on the growth and doping of ZnTe and ZnSe layers with metalorganic vapour phase epitaxy (MOVPE). Low restistive p-type ZnTe was grown by doping with arsenic and phosphorus. Acceptor concentrations of up to 3.5 × 10 17 cm -3 were achieved in the case of phosphorus-doped samples. For the first time nitrogen acceptors in ZnTe were investigated with photoluminescence at various temperatures and under resonant conditions. ZnSe layers were grown with DTBSe and DMZnTEN. The crystalline quality was investigated by high resolution X-ray diffraction. The halfwidths (150–500 arc sec) depend on the degree of relaxation and therefore on the layer thickness. Undoped ZnSe layers show at 2 K a strong recombination of free and bound excitons and a weak donor-acceptor pair luminescence.