Atomic nitrogen production in nitrogen-plasma sources used for the growth of ZnSe : N and related alloys by molecular-beam epitaxy

• Published in: Journal of crystal growth 1994-04, Vol.138 (1), p.430-436
• Main Authors: Vaudo, R.P., Cook, J.W., Schetzina, J.F.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma production and heating; Plasma sources; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)90846-X

A high resolution study of the optical emission from nitrogen-plasmas produced by an Oxford Applied Research radio frequency plasma source is reported. Strong atomic emission lines in the near-infrared spectral region provide unequivocal evidence that the nitrogen-plasma source generates an appreciable flux of nitrogen atoms. Nitrogen atoms, rather than N 2 molecules in the plasma, are the most likely nitrogen-plasma species responsible for the successful p-type doping of ZnSe : N and related alloys. Emission spectra from the radio frequency nitrogen-plasma source are compared with similar emission spectra obtained from an electron cyclotron resonance microwave nitrogen-plasma source.