Metalorganic chemical vapor deposition growth of high-quality and highly uniform strained InGaAs quantum wells in a high-speed rotating-disk reactor

• Published in: Journal of crystal growth 1994-12, Vol.145 (1), p.662-667
• Main Authors: Karakida, S., Miyashita, M., Shima, A., Kaneno, N., Mihashi, Y., Takamiya, S., Mitsui, S.
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)91123-1

High-quality and highly uniform strained InGaAs/ AlGaAs quantum-well structures have been grown successfully metalorganic chemical vapor deposition (MOCVD) using a high-speed rotating-disk reactor in which growth on three wafers of 3-inch diameter can be carried out simultaneously. By rotating the susceptor disk at a speed as high as 1000 rpm, the excellent uniformity of the quantum-well structure has been obtained. It is ascertained that the controllability of the InAs composition in InGaAs layers is high enough at a growth temperature of 675°C, which is almost the same as the optimum growth temperature for AlGaAs layers. As a result, InGaAs/ AlGaAs quantum-well lasers emitting at 980 nm have been obtained without changing the growth temperature. The fabricated lasers exhibit an excellent uniformity of the lasing wavelength (±0.09%) and a high output power (448 mW).