Elimination of wavy layer growth phenomena in strain-compensated GaInAsP/GaInAsP multiple quantum well stacks

• Published in: Journal of crystal growth 1994-12, Vol.145 (1), p.764-770
• Main Authors: Glew, R.W., Scarrott, K., Briggs, A.T.R., Smith, A.D., Wilkinson, V.A., Zhou, X., Silver, M.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)91140-1

A fifty period multiple quantum well stack composed of alternating layers of GaInAsP (100 Å, + 1% lattice mismatch) and GaInAsP (100 Å, -1% lattice mismatch) has been grown with a minimum of strain relaxation. The strain-compensated structure was over 1 μm thick, exhibited an excellent high resolution X-ray diffraction rocking curve and had a low temperature photoluminescence linewidth of only 6 meV. The growth of this structure was made possible by suppressing the wavy layer growth phenomena. The onset of wavy layer growth can be delayed by using a high V/III ratio in the gas phase and by choosing a growth temperature high enough for the barrier composition to lie outside the Ga-In-As-P miscibility limit isotherm.