Growth of InAs/GaSb strained layer superlattices. I

• Published in: Journal of crystal growth 1994-12, Vol.145 (1), p.778-785
• Main Authors: Booker, G.R., Klipstein, P.C., Lakrimi, M., Lyapin, S., Mason, N.J., Nicholas, R.J., Seong, T.-Y., Symons, D.M., Vaughan, T.A., Walker, P.J.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(94)91142-8

InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Whilst long period SLSs have been successfully grown by this technique, the growth of short period structures is adversely affected by step-bunching. By growing the SLSs faster and cooler, good periodicity was achieved as measured by Raman spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) in SLSs with bilayer (GaSb + InAs) thicknesses as thin as 50 Å. We have also detected the InSb-like and GaAs-like interface modes from room temperature Raman measurements for the first time in MOVPE grown samples. The most promising samples have been assessed by FIR photoconductivity at 4.2 K and show bandgaps (dependent on the bilayer thickness) between 5 and 20 μm.