Integrated DFB-DBR laser modulator grown by selective area metalorganic vapor phase epitaxy growth technique

A device quality of selective epitaxy growth of InGaAsP/InP multiple quantum well (MQW) structure using low-pressure metalorganic vapor phase epitaxy (MOVPE) technique is described. The technique is applied to a monolithically integrated electroabsorption modulator with distributed feedback (DFB) an...

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Bibliographic Details
Published in:Journal of crystal growth 1994-12, Vol.145 (1), p.902-906
Main Authors: Tanbun-Ek, T., Chen, Y.K., Grenko, J.A., Byrne, E.K., Johnson, J.E., Logan, R.A., Tate, A., Sergent, A.M., Wecht, K.W., Sciortine, P.F., Chu, S.N.G.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optical processors, correlators, and modulators
Optics
Physics
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Summary:A device quality of selective epitaxy growth of InGaAsP/InP multiple quantum well (MQW) structure using low-pressure metalorganic vapor phase epitaxy (MOVPE) technique is described. The technique is applied to a monolithically integrated electroabsorption modulator with distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers. Superior device characteristics such as efficient modulation, low threshold current and high efficiency operation of the integrated devices are obtained.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)91161-4