Large diameter 6H-SiC for microwave device applications

6H-polytype SiC single crystals with diameters up to 50 mm and lengths up to 75 mm have been grown in the c- and a-axis directions by physical vapor transport (PVT) at growth rates of 0.25 to 1 mm h -1. Undoped crystals grown from purified source material reveal residual impurity concentrations in t...

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Bibliographic Details
Published in:Journal of crystal growth 1994-03, Vol.137 (1), p.181-186
Main Authors: Hobgood, H.M., Barrett, D.L., McHugh, J.P., Clarke, R.C., Sriram, S., Burk, A.A., Greggi, J., Brandt, C.D., Hopkins, R.H., Choyke, W.J.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Field effect devices
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:6H-polytype SiC single crystals with diameters up to 50 mm and lengths up to 75 mm have been grown in the c- and a-axis directions by physical vapor transport (PVT) at growth rates of 0.25 to 1 mm h -1. Undoped crystals grown from purified source material reveal residual impurity concentrations in the 10 16 cm -3 range and resistivities up to 1000 ω ṡ cm. N + crystals with resistivities
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)91269-6